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IRFH5255PbF
HEXFET ? Power MOSFET
V DS
R DS(on) max
(@V GS = 10V)
Q g (typical)
R G (typical)
25
6.0
7.0
0.6
V
m Ω
nC
Ω
I D
(@T c(Bottom) = 25°C)
51
A
PQFN 5X6 mm
Applications
? Control MOSFET for high Frequency Buck Converters
Features and Benefits
Features
Low Charge (typical 7nC)
Low Rg (typical 0.6 Ω )
Low Thermal Resistance to PCB (<4.9°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Benefits
Lower Switching Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
?
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
Standard Pack
Form Quantity
Note
IRFH5255TRPbF
PQFN 5mm x 6mm
Tape and Reel
4000
IRFH5255TR2PbF
PQFN 5mm x 6mm
Tape and Reel
400
EOL notice # 259
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T A = 25°C
I D @ T A = 70°C
I D @ T C(Bottom) = 25°C
I D @ T C(Bottom) = 100°C
I DM
P D @T A = 25°C
P D @T C(Bottom) = 25°C
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
25
± 20
15
12
51
33
60
3.6
26
0.029
-55 to + 150
V
A
W
W/°C
°C
Notes ? through ? are on page 8
1
www.irf.com ? 2013 International Rectifier
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December 16, 2013
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